Matsumoto, Japan

Hidenao Kuribayashi

This inventor holds 27 USPTO granted patents and 2 published patent applications and 6 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: Fuji Electric Co., Ltd., Fuji Electric., Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidenao Kuribayashi. Retrieved from https://idiyas.com/inventor/hidenao-kuribayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 27 

% Patents Active = 88.9

 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 51(Granted Patents)


Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Solder
Silicon Carbide
Substrate Thinning
Ion Implanting
Insulated Gate Bipolar Transistor
Device Manufacturing
Semiconductor Device
Free Wheeling Diode
Fabrication Methods
Production Techniques
Device Methods
Manufacturing Processes
27 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Hidenao Kuribayashi in Semiconductor Technology

Introduction

Hidenao Kuribayashi, an accomplished inventor based in Matsumoto, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 26 patents, Kuribayashi's work has contributed to advancements in semiconductor devices and their production methods.

Latest Patents

Among his most notable recent patents, Kuribayashi has developed a semiconductor device that features a unique doping concentration profile. This innovative device comprises a semiconductor substrate that has a donor layer with specific characteristics designed to enhance performance. The patented technology outlines a first peak in the doping concentration situated at a distinct depth and describes methods to maintain uniform doping in adjacent regions. Furthermore, Kuribayashi has also introduced methods to improve semiconductor substrate quality through proton implantation and electron beam irradiation, effectively managing crystal defects to enhance breakdown voltage and reduce leakage current.

Career Highlights

Kuribayashi's dedication to the field is evidenced by the multitude of patents he has secured while working at Fuji Electric Co., Ltd. His expertise lies in semiconductor devices, where he has continually worked to refine and innovate methodologies for their production. His contributions not only advance semiconductor technology but also support the wider application of these devices in various electronic systems.

Collaborations

Throughout his career, Kuribayashi has collaborated with esteemed colleagues such as Takashi Yoshimura and Masayuki Miyazaki. Their combined efforts have facilitated the development of groundbreaking technologies in the semiconductor industry, underscoring the importance of teamwork in driving innovation.

Conclusion

Hidenao Kuribayashi stands out as a prominent figure in the semiconductor field, with a robust portfolio that showcases his inventive spirit and dedication to advancing technology. His work continues to influence the industry, paving the way for future innovations in semiconductor devices and production methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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