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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9812561 B1

PDFFull Text
Date of Patent:
Nov. 07, 2017

Filed:

Mar. 15, 2016

Semiconductor device manufacturing method, including substrate thinning and ion implanting

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Takashi Yoshimura, Matsumoto, JP;

Hidenao Kuribayashi, Matsumoto, JP;

Yuichi Onozawa, Matsumoto, JP;

Hayato Nakano, Kofu, JP;

Daisuke Ozaki, Okaya, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Olik Chaudhuri

Assistant Examiner:

Wilner Jean Baptiste

Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/26513 (2013.01); H01L 21/2855 (2013.01); H01L 21/324 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0834 (2013.01); H01L 29/1004 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/7395 (2013.01); H01L 29/0847 (2013.01);
Abstract

In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an ntype drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a ptype collector layer toward a p-type base layer, and the diffusion depth is 20 μm or more. Furthermore, an ntype buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×10cmor more, and one-tenth or less of the peak impurity concentration of the ptype collector layer, can be included between the n-type field-stop layer and ptype collector layer.

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