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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10128360 B1

PDFFull Text
Date of Patent:
Nov. 13, 2018

Filed:

Dec. 11, 2017

Semiconductor device and method for producing the same

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Masayuki Miyazaki, Matsumoto, JP;

Takashi Yoshimura, Matsumoto, JP;

Hiroshi Takishita, Matsumoto, JP;

Hidenao Kuribayashi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Christine Enad

Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/49 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/417 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 21/268 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0615 (2013.01); H01L 29/0646 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0834 (2013.01); H01L 29/1004 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/41708 (2013.01); H01L 29/49 (2013.01); H01L 29/6609 (2013.01); H01L 29/66333 (2013.01); H01L 29/861 (2013.01);
Abstract

A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.

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