Hitachi, Japan

Hidemitsu Naya

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 511(Granted Patents)


Location History:

  • Tokyo, JP (2005 - 2007)
  • Chiyoda-ku, JP (2011)
  • Hitachi, JP (2003 - 2013)

Company Filing History:


Years Active: 2003-2013

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17 patents (USPTO):Explore Patents

Title: Hidemitsu Naya: Innovator in Semiconductor Inspection Technology

Introduction

Hidemitsu Naya is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor inspection technology, holding a total of 17 patents. His work has been instrumental in advancing the capabilities of pattern inspection systems.

Latest Patents

One of Hidemitsu Naya's latest patents is a method and apparatus for pattern inspection and a semiconductor inspection system utilizing the same. This innovative pattern inspection apparatus can be integrated into a scanning electron microscope (SEM) system. It effectively separates patterns from multiple layers in a SEM image by using design data corresponding to those layers. This capability allows for targeted inspections using only the pattern of the layer of interest, enabling differentiated pattern inspections for various layers, as well as the detection of positional offsets between layers.

Career Highlights

Throughout his career, Hidemitsu Naya has worked with notable companies, including Hitachi High-Technologies Corporation and Hitachi, Ltd. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technologies.

Collaborations

Hidemitsu Naya has collaborated with esteemed colleagues such as Rikio Tomiyoshi and Mutsumi Kikuchi. These partnerships have contributed to the advancement of his innovative projects and patents.

Conclusion

Hidemitsu Naya's contributions to semiconductor inspection technology have established him as a key figure in the field. His innovative patents and collaborations reflect his commitment to advancing technology in this critical area.

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