Hidemitsu Mori

Title: Hidemitsu Mori: Innovator in Semiconductor Memory Technology

Introduction

Hidemitsu Mori is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor memory technology, holding a total of 12 patents. His work has been instrumental in advancing the efficiency and reliability of memory cells used in various electronic devices.

Latest Patents

One of Hidemitsu Mori's latest patents focuses on a semiconductor memory and the process for fabricating the same. This innovation involves a barrier layer composed of a first metal film, a metal nitride film, and a second metal film, which are laminated in that specific order. This barrier layer is strategically placed under the lower electrode of a ferroelectric capacitor within a memory cell. The primary goal of this invention is to minimize the peeling and lifting of the lower electrode from an underlying plug during the formation of a ferroelectric material film, which serves as a capacitor dielectric film. The metal nitride film is specifically formed from a nitride of a metal that constitutes either the first or second metal film.

Career Highlights

Throughout his career, Hidemitsu Mori has worked with notable companies, including NEC Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Hidemitsu has collaborated with several talented individuals in his field, including Hiromitsu Hada and Toru Tatsumi. These collaborations have fostered an environment of innovation and have led to the development of several key technologies in semiconductor memory.

Conclusion

Hidemitsu Mori's contributions to semiconductor memory technology have established him as a leading inventor in his field. His innovative patents and collaborations with industry professionals continue to influence the landscape of electronic memory solutions.