The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Apr. 20, 2001
NEC Corporation, Tokyo, JP;
Abstract
An interlayer insulating film, contacts, and wirings are formed on a MOS transistor formed on a silicon substrate. Another interlayer insulating film and contacts are formed thereon. Subsequently, as a first heat treatment, a heat treatment is performed in a hydrogen atmosphere or a nitrogen- or otherwise-diluted hydrogen atmosphere at a temperature of the order of 300-500° C. for about 5-60 minutes, thereby recovering defects that occur in the MOS transistor and insulating film forming steps and the like. Then, a ferroelectric capacitor connected to either diffusion layer of the MOS transistor is formed along with wirings, electrodes, and the like. Thereafter, as a second heat treatment, a heat treatment is performed in nitrogen at a temperature of the order of 300-500° C. for about 5-60 minutes. This recovers defects that occur after the first heat treatment step.