Tokyo, Japan

Takeshi Nakura

USPTO Granted Patents = 3 

Average Co-Inventor Count = 1.6

ph-index = 3

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2002-2004

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3 patents (USPTO):Explore Patents

Title: Innovations of Takeshi Nakura in Semiconductor Technology

Introduction

Takeshi Nakura is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of three patents to his name, Nakura has made strides in the development of advanced memory devices.

Latest Patents

One of Nakura's latest patents is a semiconductor memory device that includes Shadow RAM. This innovative device aims to prevent an increase in the cell area of Shadow RAM, which comprises a portion of an SRAM memory cell and a ferroelectric capacitor connected to a storage node. The design achieves high capacitance formation of a storage capacitor, enhancing the performance of memory devices. Another notable patent is a method of fabricating a semiconductor device that features a ferroelectric capacitor. This method involves a series of heat treatments in specific atmospheres to recover defects in the MOS transistor and insulating film, ultimately leading to the formation of a ferroelectric capacitor connected to the diffusion layer of the MOS transistor.

Career Highlights

Throughout his career, Nakura has worked with notable companies such as NEC Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Nakura has collaborated with esteemed colleagues, including Tohru Miwa and Hidemitsu Mori, further enhancing his work in the field of semiconductor devices.

Conclusion

Takeshi Nakura's contributions to semiconductor technology, particularly in memory devices, highlight his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving the efficiency and performance of electronic components.

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