The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Sep. 03, 2002
Takeshi Nakura, Tokyo, JP;
Tohru Miwa, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
There is provided a semiconductor memory device for preventing an increase of a cell area of a Shadow RAM comprising a portion of an SRAM memory cell and a ferroelectric capacitor connected to a storage node of the portion of the SRAM memory cell and achieving high capacitance formation of a storage capacitor. The Shadow RAM is provided with a relay wiring layer between a wiring layer corresponding to the storage node and a lower electrode of the ferroelectric capacitor, a wiring corresponding to the storage node is connected to a relay wiring via a first and a second opening portion arranged at a first interval and the lower electrode of the ferroelectric capacitor is connected to a relay wiring via a third and a fourth opening portion arranged at a second interval narrower than the first interval.