The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Jun. 28, 2000
Applicant:
Inventor:
Takeshi Nakura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract
A consolidated LSI including a logic circuit section and a FeRAM section formed on a single chip has a hydrogen barrier layer covering the cell array of the FeRAM section. The hydrogen barrier layer is made of plasma CVD SiON and has an excellent hydrogen barrier function. The hydrogen barrier layer protects the ferroelectric film of a ferroelectric capacitor an against the hydrogen-annealing process in the fabrication a process for the consolidated LSI.