The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2002

Filed:

Nov. 02, 2000
Applicant:
Inventors:

Hidemitsu Mori, Tokyo, JP;

Seiichi Takahashi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/702 ;
U.S. Cl.
CPC ...
H01L 2/702 ;
Abstract

A ferroelectric memory is composed of a wiring layer, a bottom electrode coupled to the wiring layer, a ferroelectric film formed on the bottom electrode, a top electrode formed on the ferroelectric film, and a metal silicide layer coupled to the top electrode and located above the ferroelectric film. The wiring layer includes substantially no silicon.


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