The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Oct. 21, 2003
Sota Shinohara, Tokyo, JP;
Koichi Takemura, Tokyo, JP;
Yasuhiro Tsujita, Tokyo, JP;
Hidemitsu Mori, Tokyo, JP;
Sota Shinohara, Tokyo, JP;
Koichi Takemura, Tokyo, JP;
Yasuhiro Tsujita, Tokyo, JP;
Hidemitsu Mori, Tokyo, JP;
NEC Electronics Corporation, , JP;
Abstract
In a semiconductor memory, a barrier layer formed of a first metal film, a metal nitride film and a second metal film laminated in the named order is formed under a lower electrode of a ferroelectric capacitor in a memory cell, in order to minimize a pealing and lifting of the lower electrode from an underlying plug in the process of forming a ferroelectric material film as a capacitor dielectric film and in its succeeding annealing process. The metal nitride film is formed of a nitride of a metal constituting the first or second metal film.