The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Sep. 25, 1997
Applicant:
Inventors:
Hidemitsu Mori, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Hiromitsu Hada, Tokyo, JP;
Naoki Kasai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257306 ; 257382 ; 257628 ; 257756 ;
Abstract
A silicon layer serving as a contact plug directly connected to a diffusion layer of a MOS transistor is provided. On a surface of an N.sup.- type diffusion layer in self-alignment with a silicon nitride layer spacer and a field oxide layer, an N.sup.+ type monocrystalline silicon layer formed by anisotropic selective epitaxial growth method is directly connected. The surface of the N.sup.+ type monocrystalline silicon layer is directly connected to an N.sup.+ type monocrystalline silicon layer formed by isotropic selective epitaxial growth.