The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Jun. 17, 1998
Hidemitsu Mori, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device using the steps of: (a) forming a large number of first transistors having a fixed gate electrode separation in a first region on a semiconductor substrate and forming a large number of second transistors having a gate electrode separation wider than that of the first transistors in a second region on the semiconductor substrate; (b) covering the entire surface of these first and second regions with an insulating film of fixed film thickness; and (c) forming a buried layer consisting of the insulating film between the gate electrodes of the first transistors by etching this entire insulating film and forming side walls consisting of the insulating film on electrodes of the second transistors. In step (c), the spaces between the gate electrodes of the first transistors are filled with insulating film in self-aligned fashion and side walls consisting of insulating film are formed on the gate electrodes of the second transistors so that the space between the gate electrodes, i.e. the diffusion layer of the first transistors, is covered with insulating film and is not exposed to the etching atmosphere.