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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

Henry J Geipel, Jr

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.7

ph-index = 9

Forward Citations = 175(Granted Patents)


Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1981-1986

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11 patents (USPTO):Explore Patents
1. 4631219 - Growth of bird's beak free semi-rox (1986-12-23),
2. 4622573 - CMOS contacting structure having degeneratively doped regions for the (1986-11-11),
3. 4527325 - Process for fabricating semiconductor devices utilizing a protective (1985-07-09),
4. 4480375 - Simple process for making complementary transistors (1984-11-06),
5. 4470191 - Process for making complementary transistors by sequential implantations (1984-09-11),
6. 4462151 - Method of making high density complementary transistors (1984-07-31),
7. 4398341 - Method of fabricating a highly conductive structure (1983-08-16),
8. 4389257 - Fabrication method for high conductivity, void-free polysilicon-silicide (1983-06-21),
9. 4369072 - Method for forming IGFET devices having improved drain voltage (1983-01-18),
10. 4329773 - Method of making low leakage shallow junction IGFET devices (1982-05-18),
11. 4282646 - Method of making a transistor array (1981-08-11),

Title: The Innovations of Henry J Geipel, Jr.

Introduction

Henry J Geipel, Jr. is a notable inventor based in Essex Junction, VT (US). He has made significant contributions to the field of technology, holding a total of 11 patents. His work primarily focuses on advancements in semiconductor technology and device structures.

Latest Patents

Among his latest patents is the "Growth of bird's beak free semi-rox," which describes an oxygen-impervious pad structure designed to reduce bird's beak profiles in semi-recessed oxide isolation regions. This innovation involves a thick layer of oxynitride that prevents lateral oxidizing species diffusion through the oxide layer of conventional pads. Additionally, he has developed a "CMOS contacting structure having degeneratively doped regions," which is suitable for use in CMOS devices. This structure effectively prevents or suppresses the latch-up phenomenon by utilizing two degeneratively doped regions of different conductivity types.

Career Highlights

Henry J Geipel, Jr. is currently associated with International Business Machines Corporation (IBM), where he continues to innovate and contribute to the field. His extensive experience and expertise have positioned him as a key figure in semiconductor research and development.

Collaborations

Some of his notable coworkers include Paul E Bakeman, Jr. and Andres G Fortino, who have collaborated with him on various projects and innovations.

Conclusion

Henry J Geipel, Jr. stands out as a prominent inventor whose work has significantly impacted semiconductor technology. His patents reflect a deep understanding of complex device structures and their applications in modern electronics.

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