The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1982
Filed:
Dec. 10, 1980
Henry J Geipel, Jr, Essex Junction, VT (US);
Richard B Shasteen, Colchester, VT (US);
International Business Machines Corp., Armonk, NY (US);
Abstract
A method for forming shallow low leakage ion implanted source/drain regions in an integrated circuit environment including semirecessed oxide isolation regions in which high parasitic device threshold voltages are provided by an oxidizing/annealing post implant process. Arsenic ions are implanted into a recessed oxide isolated substrate followed by a wet oxidation process and a non-oxidizing annealing process for a period of time to provide a passivating dielectric over low leakage source/drain regions of less than one micron junction depth and to provide adequate high temperature annealing to reduce the charge effects in the oxide isolation regions caused by the implanted arsenic ions.