The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1985
Filed:
Dec. 23, 1983
Henry J Geipel, Jr, Essex Junction, VT (US);
Charles A Schaefer, Essex Junction, VT (US);
Francis R White, Essex Junction, VT (US);
John M Wursthorn, Underhill Center, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process is provided for fabricating a semiconductor structure wherein the structure has to be exposed to certain oxidizing conditions during certain of its processing steps, such as its high temperature annealing in an oxidizing ambient. It includes depositing a 'sacrificial' layer, such as silicon, to provide a uniformly oxidizing surface during subsequent annealing operations. This sacrificial layer, which oxidizes uniformly, produces an oxide layer which also etches uniformly. Thus, after the annealing is completed, the surface oxide is removed through etching and the sacrificial layer is then also removed through a different etching step.