The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 1983
Filed:
Jan. 22, 1981
Paul E Bakeman, Jr, Shelburne, VT (US);
Andres G Fortino, Bryn Mawr, PA (US);
Henry J Geipel, Jr, Essex Junction, VT (US);
Jeffrey P Kasold, Essex Junction, VT (US);
Robert M Quinn, South Burlington, VT (US);
International Business Machines Corp., Armonk, NY (US);
Abstract
A method of providing less than one micron p-n junction regions for IGFET devices in which a high concentration of arsenic is implanted so that its peak lies near the surface of a semiconductor substrate. Phosphorus is also implanted with an energy to provide a maximum concentration below that of the arsenic and of a magnitude at least one order of magnitude less than that of arsenic. An oxidation/anneal step thermally diffuses the implanted ions to form a junction less than one micron in thickness.