San Jose, CA, United States of America

Jeffrey P Kasold

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1983-1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeffrey P Kasold. Retrieved from https://idiyas.com/inventor/jeffrey-p-kasold

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 34(Granted Patents)


Location History:

  • Essex Junction, VT (US) (1983)
  • San Jose, CA (US) (1993)

Company Filing History:


Years Active: 1983-1993

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2 patents (USPTO):Explore Patents

Title: The Innovations of Jeffrey P. Kasold

Introduction

Jeffrey P. Kasold is a notable inventor based in San Jose, California. He has made significant contributions to the field of non-volatile memory technology and IGFET devices. With a total of 2 patents, his work has had a lasting impact on the industry.

Latest Patents

One of his latest patents is for a Gate EEPROM cell. This innovative non-volatile memory cell utilizes two different areas for electron injection, allowing for direct overwriting of previously stored data without the need for an intervening erase cycle. The design features a floating gate FET with dual programming gates on its floating gate. Each programming gate includes a layer of dual electron injector structure (DEIS) and a polysilicon electrode. When writing a '0', one programming gate removes charge from the floating gate, while the other programming gate injects charge into the floating gate when writing a '1'. Notably, this charge transfer does not occur if the previously stored logic gate and the logic state to be written are identical.

Another significant patent involves a method for forming IGFET devices with improved drain voltage. This method provides less than one micron p-n junction regions for IGFET devices by implanting a high concentration of arsenic near the surface of a semiconductor substrate. Phosphorus is also implanted with an energy that ensures its maximum concentration is below that of the arsenic and at least one order of magnitude less. An oxidation/anneal step thermally diffuses the implanted ions to create a junction less than one micron in thickness.

Career Highlights

Jeffrey P. Kasold is currently employed at International Business Machines Corporation (IBM), where he continues to innovate and develop new technologies. His work has been instrumental in advancing memory cell technology and semiconductor devices.

Collaborations

Throughout his career, Jeffrey has collaborated with several notable individuals, including Paul E. Bakeman, Jr. and Andres G. Fortino. These collaborations have contributed to the success of his projects and the advancement of technology in his field.

Conclusion

Jeffrey P. Kasold is a distinguished inventor whose contributions to non-volatile memory technology and IGFET devices have made a significant impact on the industry. His innovative patents and ongoing work at IBM continue to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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