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For the Inventor, By the Inventor

South Burlington, VT, United States of America

Paul E Bakeman, Jr

This inventor holds 22 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Intersil Americas Inc., Ultratech, Inc.. Active years: 1983-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paul E Bakeman, Jr. Retrieved from https://idiyas.com/inventor/paul-e-bakeman-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22

% Patents Active = 68.2

Average Co-Inventor Count = 2.8

ph-index = 9

Forward Citations = 388(Granted Patents)


Location History:

  • Burlington, VT (US) (1999)
  • Shelburne, VT (US) (1983 - 2009)
  • South Burlington, VT (US) (1993 - 2015)

Company Filing History:

goldMedal13 out of 166,425 
 
International Business Machines Corporation
 patents
silverMedal7 out of 929 
 
Intersil Americas Inc.
 patents
bronzeMedal1 out of 138 
 
Ultratech, Inc.
 patents
4. 1 out of 834,601 
Other
 patents

Years Active: 1983-2015

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Areas of Expertise:
Active Area Bonding
High Current Structures
Thermal Processing
Multichip Structures
Electrostatic Interchip
Corrugated Vertical Stack Capacitor
Short Channel Transistors
Temperature Measurement Systems
CMOS Contacting Structure
Radiation Resistance
IGFET Devices
22 patents (USPTO):Explore Patents
1. 8946912 - Active area bonding compatible high current structures (2015-02-03),
2. 8652960 - Active area bonding compatible high current structures (2014-02-18),
3. 8569896 - Active area bonding compatible high current structures (2013-10-29),
4. 8274160 - Active area bonding compatible high current structures (2012-09-25),
5. 7795130 - Active area bonding compatible high current structures (2010-09-14),
6. 7482254 - Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating (2009-01-27),
7. 7224074 - Active area bonding compatible high current structures (2007-05-29),
8. 7005369 - Active area bonding compatible high current structures (2006-02-28),
9. 5952160 - Method and system for controlling the relative size of images formed in (1999-09-14),
10. 5943254 - Multichip semiconductor structures with consolidated circuitry and (1999-08-24),
11. 5930098 - Multichip semiconductor structures with interchip electrostatic (1999-07-27),
12. 5764342 - Method and system for controlling the relative size of images formed in (1998-06-09),
13. 5731246 - Protection of aluminum metallization against chemical attack during (1998-03-24),
14. 5703747 - Multichip semiconductor structures with interchip electrostatic (1997-12-30),
15. 5635285 - Method and system for controlling the relative size of images formed in (1997-06-03),

Title: The Innovative Mind of Paul E Bakeman, Jr

Introduction:

Paul E Bakeman, Jr is a distinguished inventor hailing from South Burlington, VT (US). His creative spirit and passion for innovation have led to remarkable contributions in the field of technology.

Latest Patents:

Paul E Bakeman, Jr holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing cutting-edge solutions to complex problems.

Career Highlights:

Throughout his illustrious career, Paul E Bakeman, Jr has been at the forefront of technological advancements. His innovative ideas have not only revolutionized industries but have also improved the quality of life for many individuals around the world.

Collaborations:

Paul E Bakeman, Jr has collaborated with leading tech companies and research institutions to bring his inventions to life. His ability to work in multidisciplinary teams has resulted in groundbreaking innovations that have left a lasting impact on society.

Conclusion:

In conclusion, Paul E Bakeman, Jr's relentless pursuit of innovation and his unwavering dedication to pushing the boundaries of technology make him a true pioneer in the world of inventors. His legacy will continue to inspire future generations of inventors to dream big and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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