The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8652960 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 18, 2014

Filed:

Dec. 18, 2012
Applicant:

Intersil Americas Inc., Milpitas, MN (US);

Inventors:

John T. Gasner, Satellite Beach, FL (US);

Michael D. Church, Canyon Lake, FL (US);

Sameer D. Parab, Redwood City, CA (US);

Paul E. Bakeman, Jr., South Burlington, VT (US);

David A. Decrosta, Melbourne, FL (US);

Robert Lomenick, Palm Bay, FL (US);

Chris A. McCarty, Melbourne, FL (US);

Assignee:

Intersil Americas Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.


Find Patent Forward Citations

Gasner, John. (2014). Active area bonding compatible high current structures (U.S. Patent No. 8652960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8652960

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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