The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Dec. 31, 2013
Applicant:

Intersil Americas Inc., Milpitas, CA (US);

Inventors:

John T. Gasner, Satellite Beach, FL (US);

Michael D. Church, Canyon Lake, FL (US);

Sameer D. Parab, Redwood City, CA (US);

Paul E. Bakeman, Jr., South Burlington, VT (US);

David A. Decrosta, Melbourne, FL (US);

Robert Lomenick, Palm Bay, FL (US);

Chris A. McCarty, Melbourne, FL (US);

Assignee:

Intersil Americas LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76801 (2013.01); H01L 21/32051 (2013.01); H01L 21/76829 (2013.01); H01L 21/76841 (2013.01); H01L 21/7685 (2013.01); H01L 1/76886 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 24/03 (2013.01); H01L 24/81 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/14 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01);
Abstract

A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.


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