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For the Inventor, By the Inventor

Appl, MN, United States of America

Henry F Huang

This inventor holds 26 USPTO granted patents and 3 published patent applications, primarily in Non-Volatile Memory. Top assignees: Seagate Technology Incorporated, Other. Active years: 2003-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Henry F Huang. Retrieved from https://idiyas.com/inventor/henry-f-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 11.5

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 221(Granted Patents)


Location History:

  • Charlottesville, VA (US) (2003)
  • Appl, MN (US) (2013)
  • Apple Valley, MN (US) (2010 - 2015)

Company Filing History:

goldMedal24 out of 8,748 
 
Seagate Technology Incorporated
 patents
silverMedal1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2003-2015

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Areas of Expertise:
Random Bit Generator
Spin-Transfer Torque Memory
Resistive Memory
Non-Volatile Memory
Data Storage
Memory Calibration
Voltage Reference
Hybrid Index Tag Array
AC Magnetic Tunnel Junction
Read-Mask-Write Operation
Enhanced Read Sense Margin
Pipeline Sensing
26 patents (USPTO):Explore Patents
1. 9087593 - Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit (2015-07-21),
2. 8675401 - Spin-transfer torque memory self-reference read method (2014-03-18),
3. 8650355 - Non-volatile resistive sense memory on-chip cache (2014-02-11),
4. 8526215 - Spatial correlation of reference cells in resistive memory array (2013-09-03),
5. 8495118 - Tunable random bit generator with magnetic tunnel junction (2013-07-23),
6. 8489801 - Non-volatile memory with hybrid index tag array (2013-07-16),
7. 8411495 - Spin-transfer torque memory self-reference read method (2013-04-02),
8. 8289786 - Data storage using read-mask-write operation (2012-10-16),
9. 8213215 - Resistive sense memory calibration for self-reference read method (2012-07-03),
10. 8203893 - Write current compensation using word line boosting circuitry (2012-06-19),
11. 8199562 - Memory cell with enhanced read and write sense margins (2012-06-12),
12. 8139397 - Spatial correlation of reference cells in resistive memory array (2012-03-20),
13. 8116122 - Spin-transfer torque memory self-reference read method (2012-02-14),
14. 8040743 - Data storage using read-mask-write operation (2011-10-18),
15. 8009457 - Write current compensation using word line boosting circuitry (2011-08-30),

Title: The Innovative Journey of Henry F Huang

Introduction: Henry F Huang is a distinguished inventor known for his groundbreaking contributions in the field of technology and engineering. With a passion for innovation, he has made significant strides in developing cutting-edge solutions that have revolutionized various industries.

Latest Patents: Henry F Huang holds several patents that showcase his ingenuity and forward-thinking approach to problem-solving. His recent patents focus on advancements in renewable energy technologies and sustainable manufacturing processes.

Career Highlights: Throughout his illustrious career, Henry F Huang has held key positions in leading tech companies, where he spearheaded research and development initiatives. His expertise in product design and engineering has led to the successful launch of several innovative products in the market.

Collaborations: Henry F Huang is known for his collaborative spirit, having worked with top researchers, engineers, and scientists on various projects. His ability to bring together diverse teams and foster creativity has been instrumental in achieving groundbreaking results.

Conclusion: In conclusion, Henry F Huang's dedication to innovation and his relentless pursuit of excellence have established him as a visionary inventor in the tech industry. His passion for creating solutions that make a positive impact on society continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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