The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Jan. 12, 2012
Hai LI, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Kang Yong Kim, Boise, ID (US);
Dimitar V. Dimitrov, Edina, MN (US);
Henry F. Huang, Appl, MN (US);
Hai Li, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Kang Yong Kim, Boise, ID (US);
Dimitar V. Dimitrov, Edina, MN (US);
Henry F. Huang, Appl, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage, the magnetic tunnel junction data cell having a first resistance state and storing the first bit line read voltage in a first voltage storage device. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The second bit line read voltage is stored in a second voltage storage device. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.