The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Dec. 06, 2010
Wenzhong Zhu, Apple Valley, MN (US);
Hai LI, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Henry Huang, Apple Valley, MN (US);
Haiwen Xi, San Jose, CA (US);
Wenzhong Zhu, Apple Valley, MN (US);
Hai Li, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Henry Huang, Apple Valley, MN (US);
Haiwen Xi, San Jose, CA (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile