Hong Kong, China

Hei Ming Shiu


Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 112(Granted Patents)


Company Filing History:


Years Active: 2005-2009

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9 patents (USPTO):Explore Patents

Title: Innovations by Hei Ming Shiu in Semiconductor Technology

Introduction

Hei Ming Shiu is a prominent inventor based in Hong Kong, CN, known for his significant contributions to semiconductor technology. With a total of 9 patents to his name, Shiu has developed innovative methods that enhance the performance and reliability of electronic components.

Latest Patents

Among his latest patents, Shiu has introduced a "Method for forming reinforced interconnects on a substrate." This method involves creating a support structure on the substrate, followed by the formation of a substantially filled capsule around the support structure to create an interconnect. Notably, these interconnects can achieve heights of up to 300 microns. Another significant patent is the "Method for forming multi-layer bumps on a substrate." This technique includes depositing an adhesive or flux on the substrate, followed by the application of a first metal powder. The process culminates in melting or reflowing the materials to form first bumps, with additional layers added without the use of wet chemicals.

Career Highlights

Hei Ming Shiu is currently employed at Freescale Semiconductor, Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced manufacturing techniques that improve the efficiency and functionality of electronic devices.

Collaborations

Shiu has collaborated with notable colleagues, including Wai Wong Chow and On Lok Chau, who have contributed to his research and development efforts in the field.

Conclusion

Hei Ming Shiu's innovative patents and contributions to semiconductor technology underscore his role as a leading inventor in the industry. His work not only enhances the capabilities of electronic components but also paves the way for future advancements in technology.

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