Wuhan, China

Hang Yin

This inventor holds 5 USPTO granted patents and 4 published patent applications. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hang Yin. Retrieved from https://idiyas.com/inventor/hang-yin-kv5y6v0w

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 80.0

Average Co-Inventor Count = 7.9

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2026

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5 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Hang Yin

Introduction

Hang Yin is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Hang Yin's latest patents is titled "Method of forming top select gate trenches." This patent describes a method for fabricating a semiconductor device that includes a first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate. The method involves forming a first dielectric trench in the core region of the first stack and a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack. Additionally, it includes forming dummy channel structures that extend through the first stack, spaced apart from the second dielectric trench.

Another notable patent is "Memory device and fabrication method thereof." This invention outlines a memory device that features a staircase region and an array region along a first lateral direction. It includes a wall structure in the staircase region and a first separation structure in the array region, arranged along the same lateral direction as the wall structure. The wall structure consists of dielectric pairs of a first dielectric layer and a second dielectric layer stacked in the staircase region, while the first separation structure is vertically aligned through a stack structure in the array region.

Career Highlights

Hang Yin is currently employed at Yangtze Memory Technologies Co., Ltd., a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Hang Yin collaborates with talented individuals in his field, including his coworkers Kai Han and Zhipeng Wu. Their combined expertise contributes to the advancement of semiconductor technology.

Conclusion

Hang Yin's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of electronics and memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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