The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2026
Filed:
Feb. 15, 2024
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Renyan Wang, Wuhan, Hubei, CN;
Wei Xu, Wuhan, Hubei, CN;
Zhipeng Wu, Wuhan, Hubei, CN;
Hang Yin, Wuhan, Hubei, CN;
Chao Sun, Wuhan, Hubei, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., WUHAN, HUBEI, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
U.S. Cl.
CPC ...
H10B 43/20 ; H10B 41/27 ; H10W 20/43 ; H10B 12/482 ; H10B 12/485 ; H10B 43/35 ; H10B 41/35 ; H10B 41/20 ; H10B 43/27 ; H10B 12/488 ; H10D 84/85 ; H10W 80/00 ; H10W 90/00 ;
Wang, Renyan. (2026). Semiconductor device and fabrication method thereof (U.S. Patent No. 12713899). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12713899
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile