Gunho Jo

Title: Gunho Jo: Innovator in Transistor Technology

Introduction

Gunho Jo is a prominent inventor based in Clifton Park, NY (US), known for his significant contributions to the field of transistor technology. With a total of five patents to his name, Jo has made remarkable advancements in the design and fabrication of transistor devices.

Latest Patents

Among his latest patents, Jo has developed innovative technologies such as stacked transistors featuring an isolation region and a common gate electrode. This invention provides a transistor device that includes a substrate, a lower transistor with a lower gate and channel region, and an upper transistor with a corresponding upper gate and channel region. The design ensures that the lower transistor is positioned between the upper transistor and the substrate, with an isolation region separating the two channel regions. Additionally, Jo has created devices that incorporate stacked nanosheet transistors, which consist of a lower nanosheet transistor and an upper nanosheet transistor, each with distinct widths and gate dimensions.

Career Highlights

Gunho Jo has established himself as a key figure in the field of semiconductor technology through his work at Samsung Electronics Co., Ltd. His innovative designs and methods have contributed to the advancement of transistor devices, enhancing their performance and efficiency.

Collaborations

Throughout his career, Jo has collaborated with notable colleagues, including Byounghak Hong and Ki-Il Kim. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Gunho Jo's contributions to transistor technology exemplify his dedication to innovation in the field. His patents reflect a commitment to advancing semiconductor technology, making a lasting impact on the industry.