The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Dec. 17, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seungchan Yun, Waterford, NY (US);
Inchan Hwang, Schenectady, NY (US);
Gunho Jo, Albany, NY (US);
Jeonghyuk Yim, Halfmoon, NY (US);
Byounghak Hong, Latham, NY (US);
Kang-ill Seo, Latham, NY (US);
Ming He, San Jose, CA (US);
JaeHyun Park, Hwaseong-si, KR;
Mehdi Saremi, Danville, CA (US);
Rebecca Park, Mountain View, CA (US);
Harsono Simka, Saratoga, CA (US);
Daewon Ha, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Transistor devices are provided. A transistor device includes a substrate. The transistor device includes a lower transistor having a lower gate and a lower channel region on the substrate. The transistor device includes an upper transistor having an upper gate and an upper channel region. The lower transistor is between the upper transistor and the substrate. The transistor device includes an isolation region that separates the lower channel region of the lower transistor from the upper channel region of the upper transistor. Moreover, the lower gate of the lower transistor contacts the upper gate of the upper transistor. Related methods of forming a transistor device are also provided.