IDiyas

For the Inventor, By the Inventor

Schenectady, NY, United States of America

Inchan Hwang

USPTO Granted Patents = 15 

 

Average Co-Inventor Count = 3.6

ph-index = 1


Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2023-2025

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15 patents (USPTO):
1. 12464818 - Three-dimensional semiconductor device having vertical misalignment (2025-11-04),
2. 12463136 - Integrated circuit devices including backside power rail and methods of forming the same (2025-11-04),
3. 12364018 - Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device (2025-07-15),
4. 12356665 - Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods (2025-07-08),
5. 12317582 - Integrated circuit devices including a metal resistor and methods of forming the same (2025-05-27),
6. 12249603 - Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same (2025-03-11),
7. 12200920 - Integrated circuit devices including a power distribution network and methods of forming the same (2025-01-14),
8. 12144163 - Selective double diffusion break structures for multi-stack semiconductor device (2024-11-12),
9. 12131996 - Stacked device with backside power distribution network and method of manufacturing the same (2024-10-29),
10. 12087815 - Crossing multi-stack nanosheet structure and method of manufacturing the same (2024-09-10),
11. 12057448 - Stacked semiconductor device having mirror-symmetric pattern (2024-08-06),
12. 12040327 - Three-dimensional semiconductor device having vertical misalignment (2024-07-16),
13. 11968818 - SRAM memory cell for stacked transistors with different channel width (2024-04-23),
14. 11935922 - Semiconductor device having stepped multi-stack transistor structure (2024-03-19),
15. 11742345 - Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistors (2023-08-29),

Title: Inchan Hwang: Innovator in Semiconductor Technology

Introduction

Inchan Hwang is a prominent inventor based in Schenectady, NY (US), known for his significant contributions to the field of semiconductor technology. With a total of 15 patents to his name, Hwang has made remarkable advancements that have influenced the design and functionality of integrated circuits.

Latest Patents

Hwang's latest patents include innovative designs such as a three-dimensional semiconductor device having vertical misalignment. This multi-stack semiconductor device features a lower-stack transistor structure and an upper-stack transistor structure, both designed to optimize performance while maintaining a compact form factor. Another notable patent involves integrated circuit devices that include a backside power rail, detailing methods for forming these devices with enhanced efficiency and reliability.

Career Highlights

Hwang has established a successful career at Samsung Electronics Co., Ltd., where he has been instrumental in developing cutting-edge semiconductor technologies. His work has not only advanced the capabilities of electronic devices but has also paved the way for future innovations in the industry.

Collaborations

Throughout his career, Hwang has collaborated with talented individuals such as Byounghak Hong and Hwichan Jun. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Inchan Hwang's contributions to semiconductor technology exemplify the spirit of innovation and dedication to advancing the field. His patents and collaborative efforts continue to shape the future of electronics, making him a key figure in the industry.

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