The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jun. 11, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inchan Hwang, Schenectady, NY (US);
Hwichan Jun, Clifton Park, NY (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including a static random access memory (SRAM) in a three-dimensional (3D) stack is provided. The semiconductor device includes a first transistor stack including a first channel and a first gate, a second transistor stack including a second channel and a second gate, the second transistor stack being disposed above the first transistor stack, a bit line disposed on a first portion of an upper surface of the first channel, a voltage source disposed on a first portion of an upper surface of the second channel and a first shared contact connecting the first channel to the second channel, where a width of the second channel is less than a width of the first channel.