Clifton Park, NY, United States of America

Hwichan Jun


 

Average Co-Inventor Count = 2.8

ph-index = 1


Location History:

  • Clifton Park, NY (US) (2023 - 2024)
  • Albany, NY (US) (2024)

Company Filing History:


Years Active: 2023-2024

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5 patents (USPTO):Explore Patents

Title: Hwichan Jun: Innovator in Semiconductor Technology

Introduction

Hwichan Jun is a prominent inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Hwichan Jun's latest patents include innovative designs for semiconductor devices. One notable patent is for a "Crossing multi-stack nanosheet structure and method of manufacturing the same." This invention describes a semiconductor device that features a substrate and a transistor formed above it, incorporating a stack of channel structures and gate structures. Another significant patent is for a "Stacked semiconductor device having mirror-symmetric pattern." This design includes a substrate with a transistor that has an active region surrounded by a gate structure, demonstrating a mirror-symmetric relationship with another stacked transistor.

Career Highlights

Hwichan Jun is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing cutting-edge devices that are crucial for modern electronics.

Collaborations

Throughout his career, Hwichan Jun has collaborated with notable colleagues, including Inchan Hwang and Byounghak Hong. These partnerships have fostered innovation and contributed to the advancement of semiconductor technologies.

Conclusion

Hwichan Jun's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced electronic devices.

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