IDiyas

For the Inventor, By the Inventor

Halfmoon, NY, United States of America

Jeonghyuk Yim

USPTO Granted Patents = 9 

 

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal9 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2023-2025

Loading Chart...
Loading Chart...
9 patents (USPTO):
1. 12464803 - Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip (2025-11-04),
2. 12356665 - Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods (2025-07-08),
3. 12310062 - Integrated circuit devices including stacked transistors and methods of forming the same (2025-05-20),
4. 12262560 - Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same (2025-03-25),
5. 12170322 - Devices including stacked nanosheet transistors (2024-12-17),
6. 12142564 - Backside power distribution network semiconductor package and method of manufacturing the same (2024-11-12),
7. 11923365 - Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same (2024-03-05),
8. 11901240 - Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip (2024-02-13),
9. 11769728 - Backside power distribution network semiconductor package and method of manufacturing the same (2023-09-26),

Title: Jeonghyuk Yim: Innovator in Transistor Technology

Introduction

Jeonghyuk Yim is a prominent inventor based in Halfmoon, NY (US), known for his significant contributions to the field of transistor technology. With a total of eight patents to his name, Yim has made remarkable advancements in the design and fabrication of integrated circuit devices.

Latest Patents

Among his latest patents, Yim has developed innovative transistor devices that include stacked transistors with an isolation region and a common gate electrode. These devices feature a substrate that supports a lower transistor with a lower gate and channel region, as well as an upper transistor with an upper gate and channel region. The design ensures that the lower transistor is positioned between the upper transistor and the substrate, with an isolation region separating the two channel regions. Additionally, Yim's patents cover integrated circuit devices that utilize a stacked structure, enhancing the performance and efficiency of electronic components.

Career Highlights

Yim's career is marked by his role at Samsung Electronics Co., Ltd., where he has been instrumental in advancing semiconductor technology. His work focuses on improving the functionality and reliability of transistor devices, which are critical for modern electronic applications.

Collaborations

Yim has collaborated with notable colleagues, including Ki-Il Kim and Gil Hwan Son, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Jeonghyuk Yim's contributions to transistor technology and integrated circuit devices highlight his role as a leading inventor in the field. His innovative patents and collaborative efforts continue to shape the future of electronics.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…