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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12262560 B1

PDFFull Text
Date of Patent:
Mar. 25, 2025

Filed:

Jan. 29, 2024

Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeonghyuk Yim, Halfmoon, NY (US);

Ki-Il Kim, Clifton Park, NY (US);

Gil Hwan Son, Clifton Park, NY (US);

Kang Ill Seo, Springfield, VA (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 30/031 (2025.01); H10D 30/6733 (2025.01); H10D 30/6735 (2025.01); H10D 62/118 (2025.01); H10D 64/01 (2025.01); H10D 64/516 (2025.01); H10D 64/518 (2025.01); H10D 84/0179 (2025.01); H10D 84/0181 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01);
Abstract

Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

Find Patent Forward Citations

Yim, Jeonghyuk. (2025). Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same (U.S. Patent No. 12262560). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12262560

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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