Wuxi New District, China

Guangsheng Zhang

USPTO Granted Patents = 5 

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Jiangsu, CN (2017)
  • Wuxi New District, CN (2018 - 2022)

Company Filing History:


Years Active: 2017-2022

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5 patents (USPTO):

Title: Innovations of Guangsheng Zhang in Semiconductor Technology

Introduction

Guangsheng Zhang is a prominent inventor based in Wuxi New District, China. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on advanced manufacturing methods and device optimization, showcasing his expertise in the industry.

Latest Patents

One of Guangsheng Zhang's latest patents is a method of manufacturing an LDMOS device having a well region below a groove. This innovative manufacturing method involves obtaining a wafer with a doped region of a first conductivity type, forming a top buried layer within this region, and creating a field oxide insulation layer structure. The process includes disposing a trench that extends to the top buried layer, injecting ions of a second conductivity type to form a well region below the trench, and forming a doped source region in the well region. The first and second conductivity types are opposites, which is crucial for the device's functionality.

Another notable patent is related to a semiconductor device and a method of adjusting the threshold voltage during manufacture via counter doping in the diffusion region. This patent describes a semiconductor device that includes a substrate and a buried layer formed on it. The diffusion layer consists of a first and a second diffusion region, with opposite impurity types. Additionally, the diffusion layer features multiple third diffusion regions formed within the second diffusion region, further enhancing the device's performance.

Career Highlights

Guangsheng Zhang has worked with notable companies in the semiconductor industry, including CSMC Technologies Fab2 Co., Ltd. and CSMC Technologies Fab1 Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative approaches to semiconductor manufacturing.

Collaborations

Throughout his career, Guangsheng Zhang has collaborated with talented individuals such as Sen Zhang and Shukun Qi. These partnerships have contributed to the advancement of semiconductor technologies and the successful development of his patents.

Conclusion

Guangsheng Zhang's contributions to semiconductor technology through his innovative patents and collaborations highlight his significant role in the industry. His work continues to influence advancements in manufacturing methods and device optimization.

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