Laterally diffused metal-oxide-semiconductor field-effect transistor

Abstract

Provided is a laterally diffused metal-oxide-semiconductor field-effect transistor, comprising a substrate (), a source (), a drain (), a body region (), a P-type field-limiting ring (), and a well region on the substrate (); the well region comprises an inserted well (), which has P-type doping and is disposed below the drain and connected to the drain; N wells () disposed at the two sides of the inserted well (); a P well () disposed next to the N well () and connected to the N well (); a P-type field-limiting ring (), which is disposed inside the N well (), is a closed ring-shaped structure, and is located at the periphery below the drain (); the inserted well () extends in its longitudinal direction to the position where it is in contact with said P-type field-limiting ring (); the source () and the body region () are disposed inside the P well ().