Laterally diffused metal oxide semiconductor device and manufacturing method therefor

Abstract

A laterally diffused metal oxide semiconductor device includes: a substrate (); a buried layer region () in the substrate; a well region () on the buried layer region (); a gate region on the well region; a source region () and a drain region () which are located at two sides of the gate region; and a super junction structure. The source region () is located in the well region (); the drain region () is located in the super junction structure; the gate region comprises a gate oxide layer and a gate electrode on the gate oxide layer; and the super junction structure comprises a plurality of N-columns and P-columns, wherein the N-columns and the P-columns are alternately arranged in a direction which is horizontal and is perpendicular to the direction of a connecting line between the source region and the drain region, each N-column comprises a top-layer N-region () and a bottom-layer N-region which are butted vertically, and each P-column comprises a top-layer P-region () and a bottom-layer P-region which are butted vertically.