The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
May. 04, 2015
Csmc Technologies Fab1 Co., Ltd., Wuxi New District, CN;
Guangsheng Zhang, Wuxi New District, CN;
Sen Zhang, Wuxi New District, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Wuxi New District, Jiangsu, CN;
Abstract
The present disclosure relates to a semiconductor device with an ESD protection structure. The semiconductor device includes a high-voltage power device, the ESD protection structure is a NMOS transistor, a drain of the NMOS transistor is shared by a source of the power device as a common-drain-source structure, substrate leading-out regions of the power deviceand the NMOS transistor are coupled to the sourceof the NMOS transistor as a ground leading-out. In the present disclosure, the drain of the NMOS transistor is shared by the source of the power device, so the increased area of the device with the ESD protection structure incorporated is small. In addition, the holding voltage at the source of the high-voltage power device is relatively low, which helps to protect the gate oxide and improve the source reliability.