The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Dec. 03, 2014
Csmc Technologies Fab1 Co., Ltd., Wuxi New District, CN;
Guangsheng Zhang, Wuxi New District, CN;
Sen Zhang, Wuxi New District, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi New District, CN;
Abstract
A semiconductor device includes a substrate (); a buried layer () formed on the substrate (), a diffusion layer () formed on the buried layer (), wherein the diffusion layer () includes a first diffusion region () and a second diffusion region (), and an impurity type of the second diffusion region () is opposite to an impurity type of the first diffusion region (); the diffusion layer () further comprises a plurality of third diffusion regions () formed in the second diffusion region, wherein an impurity type of the third diffusion region () is opposite to the impurity type of the second diffusion region (); and a gate () formed on the diffusion layer ().