Günther Schindler

This inventor holds 20 USPTO granted patents, primarily in Integrated Semiconductor Technology. Top assignees: Infineon Technologies Ag, Other. Active years: 2001-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Günther Schindler. Retrieved from https://idiyas.com/inventor/ganduumlnther-schindler

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 70.0

Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 85(Granted Patents)

Location History:

Munich, DE (2001)
München, DE (2001 - 2004)

Company Filing History:

19 out of 15,027

Infineon Technologies Ag

patents

1 out of 834,513

Other

patents

Years Active: 2001-2004

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Areas of Expertise:

Ferroelectric Memory

Integrated Circuit

Memory Configuration

Semiconductor Component

Dielectric Layer

Patterning Techniques

High-Epsilon Dielectric

Random Access Memory

Metal-Oxide Layer

Nucleation Anneal

Storage Capacitors

Electronic Properties

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6825116 - Method for removing structures (2004-11-30),

2. 6730562 - Method of patterning ferroelectric layers (2004-05-04),

3. 6656787 - Method for fabricating non-volatile memories (2003-12-02),

4. 6649468 - Method for fabricating a microelectronic component (2003-11-18),

5. 6649424 - Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectric (2003-11-18),

6. 6627934 - Integrated semiconductor memory configuration with a buried plate electrode and method for its fabrication (2003-09-30),

7. 6627496 - Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration (2003-09-30),

8. 6586348 - Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize (2003-07-01),

9. 6559003 - Method of producing a ferroelectric semiconductor memory (2003-05-06),

10. 6537900 - Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the method (2003-03-25),

11. 6515891 - Random access memory with hidden bits (2003-02-04),

12. 6503792 - Method for fabricating a patterned metal-oxide-containing layer (2003-01-07),

13. 6500677 - Method for fabricating a ferroelectric memory configuration (2002-12-31),

14. 6495415 - Method for fabricating a patterned layer (2002-12-17),

15. 6438019 - Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages (2002-08-20),

Title: Celebrating the Innovations of Inventor Günther Schindler

Introduction

Günther Schindler is a distinguished inventor based in München, Germany, known for his significant contributions to the field of semiconductor technology. With a portfolio of 20 patents, his inventive prowess has led to groundbreaking methodologies that have advanced the industry.

Latest Patents

Among Günther Schindler's latest patents are two notable innovations. The first is a "Method for removing structures," which describes a technique for eliminating structures from a substrate. This method involves applying a sacrifice layer to stabilize the structures during polishing, preventing material smearing that can occur with direct polishing methods.

The second patent is titled "Method of patterning ferroelectric layers," which focuses on structuring ferroelectric layers on semiconductor substrates. This innovation is crucial for ensuring the adherence and breakdown voltage resistance of these layers, especially in the fabrication of storage capacitors within integrated FeRAM and DRAM memory components. The use of H2O or O enhances the electrostatic breakdown strength of the ferroelectric layer, allowing it to endure significant electric fields without considerable leakage current.

Career Highlights

Günther Schindler has had a noteworthy career, prominently associated with Infineon Technologies AG, where he utilized his expertise in semiconductor technologies to develop innovative solutions. His work has played an essential role in the evolution of memory component technology.

Collaborations

Throughout his career, Günther has collaborated with esteemed colleagues, including Walter Hartner and Volker Weinrich. Their teamwork has fostered an environment conducive to creativity, leading to various successful projects and patents.

Conclusion

Günther Schindler's contributions to the field of semiconductor technology exemplify the spirit of innovation. His patents not only highlight his capabilities as an inventor but also significantly impact the technological landscape. With a continued focus on developing advanced methodologies, Schindler remains a prominent figure within the innovation community.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]