The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2004
Filed:
Feb. 11, 2003
Manfred Engelhardt, Feldkirchen-Westerham, DE;
Walter Hartner, Glen Allen, VA (US);
Frank Hintermaier, München, DE;
Günther Schindler, München, DE;
Volker Weinrich, Paris, FR;
Infineon Technologies AG, Munich, DE;
Abstract
A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H O or O results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×10 V/m without a significant leakage current.