Munich, Germany

Frank S Hintermaier


Average Co-Inventor Count = 2.5

ph-index = 11

Forward Citations = 303(Granted Patents)


Location History:

  • Munchen, DE (2000)
  • M{umlaut over (u)}nchen, DE (2001)
  • Munich, DE (2000 - 2006)
  • München, DE (2001 - 2006)

Company Filing History:


Years Active: 2000-2006

where 'Filed Patents' based on already Granted Patents

33 patents (USPTO):

Title: Innovations and Contributions of Frank S. Hintermaier

Introduction

Frank S. Hintermaier is a notable inventor based in Munich, Germany, whose work has greatly impacted the field of electrical engineering and materials science. With an impressive portfolio of 33 patents, he has developed technologies that enhance the performance and reliability of electronic devices.

Latest Patents

Among his latest patents, Hintermaier has introduced a novel capacitor design that incorporates a barrier layer made from transition metal phosphides, arsenides, or sulfides. This capacitor features a dielectric designed specifically as a high-k dielectric or ferroelectric layer. The innovation lies in the oxygen-impermeable barrier layer, which effectively prevents oxidation during high-temperature processes critical for the production of the capacitor dielectric.

Another significant patent involves a low-temperature chemical vapor deposition (CVD) process that facilitates the formation of bismuth-containing ceramic thin films. These films are particularly useful in the fabrication of ferroelectric memory devices. Utilizing a tris(β-diketonate) bismuth precursor, Hintermaier’s technique allows the production of amorphous SBT films that, after ferroannealing, exhibit superior ferroelectric properties ideal for high-density FRAMs.

Career Highlights

Throughout his career, Hintermaier has been associated with prominent companies such as Infineon Technologies AG and Advanced Technology Materials, Inc. His work at these organizations has allowed him to push the boundaries of innovation in electronic materials and components, contributing significantly to the advancement of ferroelectric technologies.

Collaborations

Hintermaier's journey has not been solitary; he has collaborated with esteemed colleagues such as Thomas H. Baum and Bryan Clark Hendrix. These partnerships have facilitated the exchange of ideas and expertise, further enriching his contributions to the field.

Conclusion

Frank S. Hintermaier's work exemplifies the spirit of innovation and dedication found in the realm of inventors. His patents not only represent significant advancements in capacitor and memory device technology but also reflect his commitment to enhancing electronic device performance. As technology continues to evolve, the impact of his contributions will undoubtedly be felt for years to come.

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