The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Apr. 30, 2004
Frank S. Hintermaier, Munich, DE;
Christine Dehm, Munich, DE;
Wolfgang Hoenlein, Untorhaching, DE;
Peter C. Van Buskirk, Newtown, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Debra A. Desrochers, Brookfield, CT (US);
Frank S. Hintermaier, Munich, DE;
Christine Dehm, Munich, DE;
Wolfgang Hoenlein, Untorhaching, DE;
Peter C. Van Buskirk, Newtown, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Debra A. Desrochers, Brookfield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(β-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.