The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2004

Filed:

Dec. 14, 1998
Applicant:
Inventor:

Frank S. Hintermaier, Munich, DE;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/640 ;
U.S. Cl.
CPC ...
C23C 1/640 ;
Abstract

A method of forming a metal oxide ceramic layer is provided, in which a gaseous flow of a vaporized solution of a precursor organo metal compound in a volatile organic solvent, e.g., plus an oxidizing gas, in the presence of a protonating additive substance and/or activating agent in gaseous state, is conducted into contact with a surface of a substrate. The operation is effected under vacuum pressure at a thermal decomposition temperature for converting the precursor compound to its corresponding metal oxide, e.g., having the same oxidation state as in the precursor compound. The additive substance is present in an amount sufficient for facilitating thermal decomposition of the precursor compound and for controlling the in situ oxidation state of the deposited metal and the amount of oxygen in the formed layer, e.g., while suppressing formation of volatile intermediates and of vacancies in the formed layer. The activating agent is present in an amount sufficient for producing in situ hydrogen-active compounds for enhancing conversion of the precursor compound to its said metal oxide as well as for controlling the in situ oxidation state of the deposited metal and the amount of oxygen in the formed layer, e.g., while suppressing formation of volatile intermediates and of vacancies in the formed layer.


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