The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Aug. 24, 2001
Günther Schindler, München, DE;
Zvonimir Gabric, Zorneding, DE;
Walter Hartner, Glen Allen, VA (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a microelectronic component includes the step of applying a barrier against the passage of hydrogen to a storage capacitor having a ferroelectric dielectric or a paraelectric dielectric. During the formation of the barrier, firstly a silicon oxide layer is produced, the latter is then subjected to a heat treatment and a barrier layer is subsequently applied. A microelectronic component has a storage capacitor and a barrier including a silicon oxide layer and a barrier layer. The silicon oxide layer is disposed on an electrode of the storage capacitor and has been subjected to a heat treatment in an oxygen-containing atmosphere. The barrier layer is disposed on the silicon oxide layer and protects the storage capacitor against a passage of hydrogen through the barrier.