The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Oct. 29, 2001
Applicant:
Inventors:
Carlos Mazuré-Espejo, St. Nazaire les Eymes, FR;
Volker Weinrich, Paris, FR;
Günther Schindler, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
In a method for fabricating a high-epsilon dielectric/ferroelectric capacitor, a patterning layer with a central base layer zone and a Si-filled trench laterally surrounding the latter is produced. Above that, a metal layer is deposited and is silicided above the Si-filled trench. Through oxidation of the silicided metal layer section the latter migrates into the trench and a base electrode is formed above the base layer zone.
Mazuré-Espejo, Carlos. (2003). Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the method (U.S. Patent No. 6537900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6537900
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile