Gabriel R Cueva

Title: The Innovative Contributions of Gabriel R Cueva

Introduction

Gabriel R Cueva is a notable inventor based in Bedford, NH (US), recognized for his significant contributions to semiconductor technology. With a total of seven patents to his name, Cueva has made strides in reducing parasitic capacitance in GaN-on-silicon devices, enhancing the performance and efficiency of electronic components.

Latest Patents

Cueva's latest patents include innovative methods for creating semiconductor structures that minimize parasitic capacitance between interconnects and ground. One such patent describes a method that involves forming a trench in the interconnect area of a substrate, utilizing low dielectric constant materials, and integrating III-nitride material layers to create efficient devices. Another patent focuses on the atomic layer deposition of a barrier metal layer for electrodes in gallium nitride devices. This method includes the deposition of tungsten nitride, which enhances the performance of the device by providing a robust electrode structure.

Career Highlights

Throughout his career, Gabriel R Cueva has worked with prominent companies such as Macom Technology Solutions Holdings, Inc. and BAE Systems Information and Electronic Systems Integration Inc. His work in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Cueva has collaborated with notable professionals in the field, including Wayne Mack Struble and Timothy Edward Boles. These collaborations have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Gabriel R Cueva's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the field, paving the way for future innovations in electronic devices.