The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 29, 2012
Kanin Chu, Nashua, NH (US);
Pane-chane Chao, Nashua, NH (US);
Kirby B. Nichols, Chelmsford, MA (US);
Gabriel Cueva, Bedford, NH (US);
Kanin Chu, Nashua, NH (US);
Pane-Chane Chao, Nashua, NH (US);
Kirby B. Nichols, Chelmsford, MA (US);
Gabriel Cueva, Bedford, NH (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Abstract
A field effect transistor and method for making such a transistor is provided, the field effect transistor comprising: a gate layer stack comprising a layer of a first metal is disposed proximate to at least one layer of a second metal, wherein the first metal alloys with the second metal to form a shape memory alloy. The shape metal allow may be NiTi, and at the contact plane between the layers, the alloy is formed when the transistor is heated to an elevated temperature.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile