The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Aug. 26, 2020
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Timothy E. Boles, Tyngsboro, MA (US);

Wayne Mack Struble, Franklin, MA (US);

Gabriel R. Cueva, Bedford, NH (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/532 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 21/823437 (2013.01); H01L 23/53223 (2013.01); H01L 29/2003 (2013.01); H01L 29/42372 (2013.01);
Abstract

An electrode structure for a device, such as a GaN or AlGaN device is described. In one example, a method to form the structure includes providing a substrate including gallium nitride material, forming an insulating layer over a surface of the substrate, forming an opening in the insulating layer to expose a surface region of the substrate, depositing a barrier metal layer over the insulating layer and onto the surface region of the substrate through the opening, and depositing a conducting metal layer over the barrier metal layer. In one case, the barrier metal layer includes a layer of tungsten nitride. The layer of tungsten nitride is deposited over the insulating layer and onto the surface region of the substrate using atomic layer deposition.


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