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For the Inventor, By the Inventor

Yokkaichi, Japan

Fumitaka Amano

USPTO Granted Patents = 22 

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 167(Granted Patents)


Company Filing History:

goldMedal22 out of 4,549 
 
Sandisk Technologies Inc.
 patents

Years Active: 2017-2025

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22 patents (USPTO):Explore Patents
1. 12482751 - Three-dimensional memory device including composite backside metal fill structures and methods for forming the same (2025-11-25),
2. 12456699 - Semiconductor devices containing copper bonding pads with different conductive barrier layers and methods for forming the same (2025-10-28),
3. 12456688 - High aspect ratio via fill process employing selective metal deposition and structures formed by the same (2025-10-28),
4. 12451451 - Bonded assembly including interconnect-level bonding pads and methods of forming the same (2025-10-21),
5. 12408337 - Three-dimensional memory device including composite backside metal fill structures and methods for forming the same (2025-09-02),
6. 12087628 - High aspect ratio via fill process employing selective metal deposition and structures formed by the same (2024-09-10),
7. 12087626 - High aspect ratio via fill process employing selective metal deposition and structures formed by the same (2024-09-10),
8. 11990413 - Three-dimensional memory device including aluminum alloy word lines and method of making the same (2024-05-21),
9. 11935784 - Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same (2024-03-19),
10. 11637038 - Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same (2023-04-25),
11. 11488975 - Multi-tier three-dimensional memory device with nested contact via structures and methods for forming the same (2022-11-01),
12. 11437270 - Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same (2022-09-06),
13. 11309402 - Semiconductor device containing tubular liner spacer for lateral confinement of self-aligned silicide portions and methods of forming the same (2022-04-19),
14. 11296112 - Multi-layer barrier for CMOS under array type memory device and method of making thereof (2022-04-05),
15. 10662522 - Thermal metal chemical vapor deposition process (2020-05-26),

Title: The Innovative Journey of Fumitaka Amano

Introduction: Fumitaka Amano, a distinguished inventor hailing from Yokkaichi, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Fumitaka Amano's recent patents focus on advancements in semiconductor technology, particularly in the field of nanoelectronics and energy-efficient devices.

Career Highlights: With a career spanning over two decades, Amano has worked tirelessly to push the boundaries of technological possibilities. His work has been instrumental in shaping the future of the semiconductor industry.

Collaborations: Throughout his career, Fumitaka Amano has collaborated with leading research institutions and tech companies to bring his inventions to life. His collaborative spirit has led to the development of cutting-edge technologies that have revolutionized the industry.

Conclusion: Fumitaka Amano's passion for innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the limits of what is possible.

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